• DocumentCode
    68279
  • Title

    Preparation and Properties of Ferromagnetic Antiperovskite Co3FeN Thin Films

  • Author

    Sakakibara, Hideki ; Ando, Hideki ; Miyawaki, Tetsuya ; Ueda, Kazunori ; Asano, Hiroya

  • Author_Institution
    Dept. of Crystalline Mater. Sci., Nagoya Univ., Nagoya, Japan
  • Volume
    50
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.
  • Keywords
    cobalt compounds; enhanced magnetoresistance; ferromagnetic materials; iron compounds; magnetic epitaxial layers; magnetisation; sputter deposition; vapour phase epitaxial growth; (La0.18Sr0.82)(Al0.59Ta0.41)O3; (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates; Co3FeN; N2 volume concentration; antiperovskite structure; epitaxial growth; ferromagnetic antiperovskite thin films; negative anisotropic magnetoresistance effect; reactive magnetron sputtering; saturation magnetization; sputtering gas mixture; structural properties; Lattices; Molecular beam epitaxial growth; Perpendicular magnetic anisotropy; Sputtering; Substrates; Anisotropic magnetoresistance (AMR); Co3FeN; antiperovskite; half-metal; thin film;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2014.2326897
  • Filename
    6971351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=68279