Radiation study in quantum well III-V multi-junction solar cells

Author

Gonzalez, M. ; Hoheisel, Raymond ; Lumb, Matthew P. ; Scheiman, David A. ; Bailey, Christopher G. ; Lorentzen, J. ; Maximenko, Sergey ; Messenger, Scott R. ; Jenkins, Phillip P. ; Tibbits, Thomas N. D. ; Imaizumi, Masayuki ; Ohshima, T. ; Sato, Seiki ; Wa

Author_Institution

Sotera Defense Solutions, Annapolis Junction, MD, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

3233

Lastpage

3236

Abstract

The effect of particle radiation in multi quantum well (MQW) multi-junction InGaP/MQW-InGaAs/Ge solar cells was studied. For comparison purposes, and to identify the origin of the degradation, the same study was performed in the correspondent iso-type cells. Results show that under 1 MeV electron irradiation the MQW-middle junction dictates the degradation of the triple junction cell. Alternative, more radiation hard, designs are presented.

Keywords

III-V semiconductors; electron beam effects; elemental semiconductors; gallium arsenide; germanium; indium compounds; semiconductor quantum wells; solar cells; Ge; InGaAs; InGaP; MQW multijunction InGaP-MQW-InGaAs-Ge solar cells; MQW-middle junction; degradation; electron irradiation; isotype cells; multiquantum well multijunction solar cells; particle radiation; radiation study; triple junction cell; Absorption; Degradation; Indium gallium arsenide; Junctions; Performance evaluation; Photovoltaic cells; Quantum well devices; Electron; III-V; MQW; Multi-Junction; Multi-Quantum Well; Proton; Radiation; Solar cells; Space;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745141

Filename

6745141