DocumentCode
688890
Title
The analysis of nano-patterned sapphire substrates-induced compressive strain to enhance quantum-confined stark effect of InGaN-based light-emitting diodes
Author
Po-Hsun Chen ; Su, Vincent ; Yao-Hong You ; Ming-Lun Lee ; Cheng-Ju Hsieh ; Chieh-Hsiung Kuan ; Hung-Ming Chen ; Han-Bo Yang ; Hung-Chou Lin ; Ray-Ming Lin ; Fu-Chuan Chu ; Gu-Yi Su
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
This paper demonstrates that the quantum-confined stark effect of InGaN-based light-emitting diodes can be enhanced by the means of using the hexagonal nano-post patterned sapphire substrates based on the increase of the post-duty cycle.
Keywords
III-V semiconductors; compressive strength; electro-optical devices; gallium compounds; indium compounds; light emitting diodes; nanopatterning; quantum confined Stark effect; wide band gap semiconductors; Al2O3; InGaN; InGaN-based light-emitting diodes; hexagonal nano-post patterned sapphire substrates; nanopatterned sapphire substrate-induced compressive strain; post-duty cycle; quantum-confined Stark effect; Educational institutions; Gallium nitride; Light emitting diodes; Quantum well devices; Stark effect; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833267
Link To Document