DocumentCode
688979
Title
Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy
Author
Connelly, Blair C. ; Woodward, Nathaniel T. ; Metcalfe, G.D. ; Rodak, L.E. ; Das, Nakul Chandra ; Reed, Meredith L. ; Sampath, A.V. ; Shen, Haiying ; Wraback, M. ; Farrell, R.M. ; Iza, M. ; Cruz, Samantha C. ; Lang, Jordan R. ; Young, N.G. ; Terao, Yutaka
Author_Institution
RDRL, U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; solar cells; wide band gap semiconductors; GaN-InGaN-GaN; heavily-doped layers; heterointerface; p-GaN-i-InGaN-n-GaN solar cell heterostructure; polarization charges; temperature 110 K; temperature-dependent carrier transport; ultrafast spectroscopy; Electric fields; Gallium nitride; Junctions; Laser excitation; Photovoltaic cells; Physics; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833359
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