DocumentCode
688980
Title
Ultralow-threshold continuous-wave Raman silicon laser using a photonic crystal high-ß nanocavity
Author
Takahashi, Y. ; Inui, Yoshitaka ; Asano, Takashi ; Noda, Satoshi
Author_Institution
Nanosci. & Nanotechnol. Res. Center, Osaka Prefecture Univ., Sakai, Japan
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We report a unique design of a Raman silicon laser using a photonic crystal high-Q nanocavity without the reverse-biased p-i-n diode, which leads to the continuous-wave lasing operation with ultralow threshold power of ~1 μW.
Keywords
Raman lasers; laser beams; laser cavity resonators; photonic crystals; silicon; solid lasers; Si; continuous-wave lasing operation; photonic crystal high-Q nanocavity; ultralow threshold power; ultralow-threshold continuous-wave Raman silicon laser; Laser excitation; Laser modes; Pump lasers; Raman scattering; Semiconductor lasers; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833360
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