DocumentCode
689036
Title
Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 μm
Author
Khan, M.Z.M. ; Ng, Tien Khee ; Lee, Ching-Sung ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; quantum dash lasers; waveguide lasers; InAs-InGaAlAs-InP; chirped AlGaInAs barrier layer thickness; extremely wide lasing bandwidth; quantum-dash ridge-waveguide laser; ultrabroad lasing bandwidth; Bandwidth; Cavity resonators; Chirp; Semiconductor lasers; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833417
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