• DocumentCode
    689060
  • Title

    Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

  • Author

    Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; electrical conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor quantum dots; APD-PIN photodiodes; I-V curves; InAs-InAlGaAs; RF responses; avalanche multiplication factor; quantum-dot PIN photodiodes; quantum-dot absorption layer; temperature dependence; Absorption; Avalanche photodiodes; Dark current; PIN photodiodes; Photonic band gap; Quantum dots; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689060