Nitride VECSELs as light sources for biomedical applications

Author

Wunderer, Thomas ; Northrup, John E. ; Zhihong Yang ; Teepe, Mark ; Johnson, Noble M. ; Rotella, Pete ; Wraback, M.

Author_Institution

Palo Alto Res. Center Inc., Palo Alto, CA, USA

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

In-well-pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Laser emission with a single longitudinal mode at 440 nm was achieved by exclusively pumping the quantum wells with the 384 nm emission line of a dye-/N2-laser.

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; laser applications in medicine; laser mirrors; laser modes; optical pumping; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; GaN; InGaN-GaN; high-reflectivity dielectric distributed Bragg-reflectors; in-well-pumping; light sources; metal-organic vapor phase epitaxy; nitride VECSEL; resonant periodic gain configuration; single longitudinal mode; vertical-external-cavity surface-emitting lasers; wavelength 384 nm; wavelength 440 nm; Gallium nitride; Laser excitation; Laser modes; Pump lasers; Quantum well lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6833796