• DocumentCode
    689523
  • Title

    Toward an efficient germanium-on-silicon laser: Ultimate limits of tensile strain and n-type doping

  • Author

    Sukhdeo, David S. ; Donguk Nam ; Ze Yuan ; Dutt, Birendra Raj ; Saraswat, Krishna C.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigate the ultimate limits of tensile strain and n-type doping for improving germanium lasers. These ultimate limits occur around 2.3-3.7% biaxial strain and 1018-1019 cm-3 electrically-active doping. >1000x threshold reductions are possible.
  • Keywords
    elemental semiconductors; germanium; semiconductor doping; semiconductor lasers; biaxial strain; electrically-active doping; germanium-on-silicon laser; n-type doping; tensile strain; Doping; Laser theory; Mirrors; Silicon; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689523