Polarization and power of AlGaN/AlN HEMT

Author

Das, Aruneema ; Kanjilal, Maitreyi Ray ; Sarkar, Pradyut

Author_Institution

Dept. of Electron. & Commun. Eng., Narula Inst. of Technol., Kolkata, India

fYear

2013

fDate

20-21 Sept. 2013

Firstpage

415

Lastpage

417

Abstract

High-Electron-Mobility-Transistor can operate with very small gate length below 0.5 μm and it attracts applications at very high frequency - in the THz range. In particular HEMTs have shown power gain at frequencies greater than 1THz.. This device has an improved trans-conductance and carrier saturation velocity. HEMT offers high power efficiency, greater consistency and broader bandwidth in wireless communication system. The polarization and power characteristics of the AlGaN/AlN combination have been presented in this paper.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; wireless channels; AlGaN-AlN; HEMT; carrier saturation velocity; high electron mobility transistor; polarization characteristics; power efficiency; power gain; transconductance; wireless communication; HEMT; High power devices; Polarization; Power characteristics; THF range; Wireless communication;

fLanguage

English

Publisher

iet

Conference_Titel

Communication and Computing (ARTCom 2013), Fifth International Conference on Advances in Recent Technologies in

Conference_Location

Bangalore

Print_ISBN

978-1-84919-842-4

Type

conf

DOI

10.1049/cp.2013.2189

Filename

6843021