Cubic structure sic p-i-n diode as rf switch

Author

Kundu, A. ; Kanjilal, Maitreyi Ray ; Das, Aruneema ; Kundu, Jhuma ; Mukherjee, Moumita

Author_Institution

ECE Dept., Abacus Inst. of Eng. & Manage., Hooghly, India

fYear

2013

fDate

18-19 Oct. 2013

Firstpage

482

Lastpage

484

Abstract

The paper presents the switching characteristics, insertion loss and isolation of 3C-SiC based p-i-n diode as microwave switch. The resistance of the switch is a function of frequency and also depends on characteristics and the geometric structure of intrinsic region. At higher frequency (~50GHz) the switch offers low resistance and the switch has high resistance at low frequency but it would have lower isolation. This diode can be used as single pole single through (SPST) switch or single pole double through (SPDT) switch or single pole multi through (SPMT) switch. The results of 3CSiC have been compared with that of GaAs p-i-n diode and it reveals that SiC is superior compare to GaAs.

Keywords

microwave switches; p-i-n diodes; silicon compounds; wide band gap semiconductors; 3C-SiC based p-i-n diode; RF switch; SiC; cubic structure SIC p-i-n diode; geometric structure; microwave switch; single pole double through switch; single pole multithrough switch; single pole single through switch; switch resistance; 3C-SiC; effective diffusion length; intrinsic impedance; p-i-n diode; single pole double through (SPDT); single pole single through (SPST) switch; stored charge;

fLanguage

English

Publisher

iet

Conference_Titel

Computational Intelligence and Information Technology, 2013. CIIT 2013. Third International Conference on

Conference_Location

Mumbai

Type

conf

DOI

10.1049/cp.2013.2632

Filename

6950916