• DocumentCode
    702849
  • Title

    Distinguishing conductive filament and non-localized gate conduction in resistive switching devices

  • Author

    Maestro, M. ; Crespo-Yepes, A. ; Martin-Martinez, J. ; Claramunt, S. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.

  • Author_Institution
    Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel.
  • Keywords
    field effect transistor switches; MOSFET; RS device; area distributed gate current; conductive filament; high resistance state; localized current separate; metal-oxide-semiconductor field-effect transistor; nonlocalized gate conduction; resistive switching device; transistor channel; Electron devices; Logic gates; Metals; Switches; Resistive switching; conductive filament; high resistance state; reset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087498
  • Filename
    7087498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=702849