Study of Channeling and Self-Sputtering Effects of Ion Implantation - Data and Modeling

Author

Qin, Shu

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

2015

fDate

20-20 March 2015

Firstpage

1

Lastpage

4

Abstract

Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.

Keywords

amorphous semiconductors; channelling; curve fitting; elemental semiconductors; ion implantation; secondary ion mass spectra; semiconductor doping; silicon; sputtering; transmission electron microscopy; HR-TEM measurements; SIMS measurements; SRIM simulations; Si; amorphous silicon layer thickness data; channeling effect factor; implant dose; implant energy; ion implantation; ion mass; least squares fitting algorithm; logarithm function; modeling fitting curve; self-sputtering effect; Data models; Fitting; Implants; Semiconductor device measurement; Semiconductor device modeling; Silicon; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2015 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3834

Print_ISBN

978-1-4799-7644-7

Type

conf

DOI

10.1109/WMED.2015.7093688

Filename

7093688