DocumentCode
708089
Title
New simulation method for Deep Trench Termination diode (DT2) using mixed-mode TCAD sentaurus
Author
Baccar, F. ; Arbess, H. ; Theolier, L. ; Azzopardi, S. ; Woirgard, E.
Author_Institution
IMS Lab., Univ. of Bordeaux, Talence, France
fYear
2015
fDate
19-22 April 2015
Firstpage
1
Lastpage
5
Abstract
This work presents a methodology using mixed-mode simulation with TCAD Sentaurus to model, analyze, and optimize the representation of the Deep Trench Termination Diode (DT2) without increasing the number of nodes and the computation time. Moreover, several convergence problems which can be found for many kinds of simulations have been resolved.
Keywords
isolation technology; semiconductor diodes; technology CAD (electronics); DT2 diode; TCAD Sentaurus; deep trench termination diode; mixed-mode simulation; Anodes; Convergence; IP networks; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on
Conference_Location
Budapest
Print_ISBN
978-1-4799-9949-1
Type
conf
DOI
10.1109/EuroSimE.2015.7103122
Filename
7103122
Link To Document