4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab

Author

Meng-Chia Lee ; Gangyao Wang ; Huang, Alex Q.

Author_Institution

NSF FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

2015

fDate

15-19 March 2015

Firstpage

1051

Lastpage

1057

Abstract

A physics-based 15kV 4H-SiC n-IGBT sub-circuit model implemented in Simulink/Matlab is demonstrated in this work. Two-phase voltage ramp during the switching before and after punch through is well predicted. Simulated with a simple 4H-SiC Schottky diode model, the switching results is experimentally verified. The current bump during turn-off and current overshoot during turn-on are well-predicted and can be explained by the instantaneous output capacitances of the IGBT and Schottky diode. The computing speed for the full turn-on and off with stray inductance is approximately 2 minutes.

Keywords

electronic engineering computing; insulated gate bipolar transistors; silicon compounds; H-SiC; Schottky diode model; Simulink/Matlab; n-IGBT physics-based sub-circuit model; stray inductance; two-phase voltage ramp; voltage 15 kV; Capacitance; Charge carrier density; Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; Software packages; Temperature measurement; 4H-SiC; IGBT; high voltage; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104478

Filename

7104478