DocumentCode
708660
Title
Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si
Author
Lin Qi ; Nanver, Lis K.
Author_Institution
Delft Univ. of Technol.Delft, Delft, Netherlands
fYear
2015
fDate
23-26 March 2015
Firstpage
169
Lastpage
174
Abstract
Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.
Keywords
electric resistance measurement; elemental semiconductors; photodiodes; silicon; PureB deposition; Si; photodiode; process monitoring; pure boron deposition; sheet resistance measurement; sheet-resistance test-structure; temperature 400 degC; Atmospheric measurements; Monitoring; Particle measurements; Performance evaluation; Pollution measurement; Process control; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location
Tempe, AZ
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106135
Filename
7106135
Link To Document