Graphene-based MMIC process development and RF passives design

This paper describes an available graphene process with respect to material properties and also the work in progress to complete the graphene process back-end implementation to be MMIC-compatible. This process extension is critical to enable fully integrated circuits and systems based on graphene transistors. A stable process back-end is proposed, characterized and tested on both silicon and quartz substrates. Based on this, a process cross-section is now available for EM simulations. A prototype chip of RF passive devices including spiral inductors, MIM capacitors and thin film resistors, TFRs, is fabricated and measured on both substrates. On-wafer measurements of the fabricated passive devices up to 30 GHz show good agreement with EM simulation results.