• DocumentCode
    709816
  • Title

    NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures

  • Author

    Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Bury, Erik ; Mertens, Hans ; Ritzenthaler, Romain ; Grasser, Tibor ; Horiguchi, Naoto ; Thean, Aaron ; Groeseneken, Guido

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2015
  • fDate
    19-23 April 2015
  • Abstract
    SiGe channel planar pMOSFETs have been recently shown to offer improved NBTI reliability, owing to reduced hole trapping into pre-existing oxide defects and reduced interface state generation. In this paper we report a broad set of experimental data of SiGe cladding finFETs with varying fin widths, and we show that the intrinsically superior NBTI reliability can be ported to 3D architectures of relevance for N10 and beyond. The underlying physical mechanisms are discussed and compared to planar technologies.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; MOSFET; integrated circuit reliability; negative bias temperature instability; semiconductor materials; 3D architectures; NBTI; Si0.55Ge0.45; SiGe cladding finFETs; fin widths; planar technologies; reliability; Charge carrier processes; Degradation; Interface states; Reliability; Silicon; Silicon germanium; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112694
  • Filename
    7112694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=709816