DocumentCode
709898
Title
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis
Author
Malherbe, Victor ; Gasiot, Gilles ; Soussan, Dimitri ; Patris, Aurelien ; Autran, Jean-Luc ; Roche, Philippe
Author_Institution
STMicroelectron., Crolles, France
fYear
2015
fDate
19-23 April 2015
Abstract
We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves to be experimentally quasi-immune to alpha particles. Simulation results are also presented, through 3D-TCAD investigations of the transport mechanisms followed by Monte-Carlo simulations of the charge deposition.
Keywords
Monte Carlo methods; SRAM chips; radiation hardening (electronics); silicon-on-insulator; technology CAD (electronics); 3D-TCAD; FDSOI; Monte-Carlo simulation; SRAM bitcell; alpha irradiation; alpha particle; alpha soft error rate; charge deposition; experimental testing; fully-depleted silicon on insulator; quasi-immunity; simulation analysis; size 28 nm; soft error rate measurement; static random-access memory; transport mechanism; Alpha particles; Logic gates; MOSFET; Monte Carlo methods; Silicon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112829
Filename
7112829
Link To Document