Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Positive Bias Temperature Instability (PBTI) of HfO₂/metal gate n-channel bulk FinFET is simulated through a KMC method, which includes fully coupled multi-physical models under a unified framework. PBTI is simulated using electron capture/emission and trap generation/recombination. By comparing PBTI of different traps with/without generation and recombination in HfO₂, it indicates that the only consideration of trap generation can result in overestimation of the threshold shift and shorten predicted lifetime.