• DocumentCode
    71302
  • Title

    p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study

  • Author

    Gerlach, D. ; Wippler, D. ; Wilks, R.G. ; Wimmer, Manuel ; Lozac´h, M. ; Felix, R. ; Ueda, Shuichi ; Yoshikawa, Hideki ; Lips, K. ; Rech, Bernd ; Sumiya, Masato ; Kobayashi, Kaoru ; Gorgoi, Mihaela ; Hupkes, J. ; Bar, M.

  • Author_Institution
    Helmholtz-Zentrum Berlin fur Mater. und Energie GmbH, Berlin, Germany
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    483
  • Lastpage
    487
  • Abstract
    The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
  • Keywords
    II-VI semiconductors; X-ray photoelectron spectra; aluminium; amorphous semiconductors; hydrogenation; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; HAXPES; Si:H-ZnO:Al; X-ray excitation energy; chemical property; deposition rate; electronic property; hard X-ray photoelectron spectroscopy study; modified Auger parameter; pronounced band bending; silicon capping layer; thin-film solar cell structures; Chemicals; Photoelectricity; Photovoltaic cells; Silicon; Spectroscopy; Zinc oxide; Hard X-ray photoelectron spectroscopy (HAXPES); Si thin-film solar cell; surface and interface analysis;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2224644
  • Filename
    6355944