Analog amplifier design in short-channel MOSFET using alpha-power model

A simple method is introduced to design an analog amplifier using Alpha-Power MOS law model in submicron region. Design starts by estimation of three unknown parameter α, V_TH and k in Alpha-Power MOS law model from the simulated I-V values of a device characteristics, so that the simulated drain current should fit the Alpha-Power based drain current equation. Device dimension setup using the estimated value to meet the design criteria is described. This paper includes variation of α, k with V_GS to minimize the design errors. Design procedures and analysis of simulated data using proposed method are briefly described and verified by designing an amplifier with resistive load. Proposed method is much simpler and fully technology independent and also free from complex mathematical expressions associated with the devices. Design performance using the proposed method is quite closer and very much suitable for initial design based on hand calculation.