DocumentCode
713273
Title
Measuring complex for analysis of recombination deep traps in semiconductor solar cells
Author
Litvinov, Vladimir G. ; Vishnyakov, Nikolay V. ; Gudzev, Valery V. ; Mishustin, Vladislav G. ; Karabanov, Sergey M. ; Vikhrov, Sergey P. ; Karabanov, Andrey S.
Author_Institution
Dept. of Biomed. & Semicond. Electron., Ryazan State Radio Eng. Univ., Ryazan, Russia
fYear
2015
fDate
17-19 March 2015
Firstpage
1071
Lastpage
1074
Abstract
Measuring complex for analysis of recombination deep traps in semiconductor solar cells based on the I-DLTS is described. Measuring complex can be used in the industry of semiconductor solar cells where is necessary to control deep traps concentration and required level of conversion efficiency and quality of solar cells.
Keywords
electron traps; electron-hole recombination; hole traps; photoelectric devices; solar cells; I-DLTS; measuring complex; recombination deep trap analysis; semiconductor solar cells; Conductivity; Current measurement; Photovoltaic cells; Radiative recombination; Semiconductor device measurement; Temperature measurement; Transient analysis; DLTS; I-DLTS; deep level; semiconductor; solar cell; trap;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Technology (ICIT), 2015 IEEE International Conference on
Conference_Location
Seville
Type
conf
DOI
10.1109/ICIT.2015.7125239
Filename
7125239
Link To Document