• DocumentCode
    715217
  • Title

    Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon

  • Author

    Bo-Ji Huang ; Chung-Lun Wu ; Yung-Hsiang Lin ; Po-Han Chang ; Chih-I Wu ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Nonstoichiometric Si1-xGex films fabricated by plasma enhanced chemical vapor deposition (PECVD) with different flounce ratios are demonstrated to show the composition ratio dependent optical properties, including refractive index, bandgap and optical absorption. By increasing the fluence ratio from 0.2 to 0.5, the refractive index of Si1-xGex film raises from 3.527 to 3.927, with the absorption coefficient enlarging from <;<;1cm-1 to 31.12 cm-1.
  • Keywords
    Ge-Si alloys; energy gap; plasma CVD; refractive index; semiconductor thin films; PECVD; Si1-xGex; composition ratio dependent refractive index; flounce ratios; nonstoichiometric films; optical absorption; optical bandgap; plasma enhanced chemical vapor deposition; Nonlinear optics; Optical device fabrication; Optical films; Optical refraction; Optical variables control; Refractive index; SiGe; optical bandgap; refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7132002
  • Filename
    7132002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=715217