Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals

Author

Evtukh, A. ; Bratus, O. ; Steblova, O. ; Prokopchuk, V.

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2015

fDate

21-24 April 2015

Firstpage

101

Lastpage

104

Abstract

The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82-350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics the calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.

Keywords

Fermi level; MIS structures; aluminium; annealing; electron traps; elemental semiconductors; high-temperature effects; hopping conduction; insulating thin films; nanocomposites; nanofabrication; plasma materials processing; silicon; silicon compounds; sputter deposition; Fermi level; Si-SiO₂-Al; current transport; current-voltage characteristics; electrical conductivity; electrical parameters; electron transport; high-temperature annealing; insulating films; ion-plasma sputtering; nanocomposite films; silicon nanoclusters; silicon nanocrystals; temperature 82 K to 350 K; variable-range hopping conductivity; Conductivity; Films; Nanocrystals; Silicon; Temperature; Temperature dependence; Temperature measurement; current-voltage characteristic; electron transport; silicon nanoclusters; traps; variable- range hopping;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146844

Filename

7146844