A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET

Author

Matsuzaki, Takanori ; Onuki, Tatsuya ; Nagatsuka, Shuhei ; Inoue, Hiroki ; Ishizu, Takahiko ; Ieda, Yoshinori ; Yamade, Naoto ; Miyairi, Hidekazu ; Sakakura, Masayuki ; Shionoiri, Yutaka ; Kato, Kiyoshi ; Okuda, Takashi ; Koyama, Jun ; Yamamoto, Yoshitaka

Author_Institution

Semicond. Energy Lab. Co., Ltd., Atsugi, Japan

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

A 16-level cell is demonstrated using a test chip of nonvolatile oxide semiconductor RAM comprising c-axis aligned crystalline In-Ga-Zn oxide FETs. A read circuit composed of voltage followers outputs a read voltage with a maximum distribution of 37 mV. A single voltage follower has a maximum distribution of the read voltage of 25.3 mV. A 200 ns write time of the test chip is demonstrated.

Keywords

CMOS memory circuits; field effect transistor circuits; indium compounds; operational amplifiers; random-access storage; semiconductor storage; 16-level-cell nonvolatile memory; In-Ga-Zn; crystalline oxide FET; nonvolatile oxide semiconductor RAM; read circuit; time 200 ns; voltage 25.3 mV; voltage 37 mV; voltage followers; Capacitors; Field effect transistors; Logic gates; Nonvolatile memory; Random access memory; Silicon; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150266

Filename

7150266