• DocumentCode
    719525
  • Title

    A Reliable Cross-Point MLC ReRAM with Sneak Current Compensation

  • Author

    Jong-Min Baek ; Sang-Yun Kim ; Jae-Koo Park ; Jae-Young Park ; Kee-Won Kwon

  • Author_Institution
    Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
  • fYear
    2015
  • fDate
    17-20 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, a reliable cross-point MLC ReRAM is introduced and fully integrated with 350nm CMOS technology. Both resistance states and variations are widely investigated with different compliance current. The self-termination scheme is adopted to prevent overstress to switched cell in set operation. As a result of self termination, write failure is prohibited and the uniformity on LRS of 300 uA compliance improved 2.3 times. In order to deter the compliance current offset in set operation, a sneak current compensation scheme of which controlled by ADC is proposed.
  • Keywords
    CMOS memory circuits; multivalued logic circuits; resistive RAM; CMOS technology; compliance current offset; cross-point MLC ReRAM; current 300 muA; self-termination scheme; size 350 nm; sneak current compensation; write failure; Arrays; Current measurement; Microprocessors; Reliability; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6931-2
  • Type

    conf

  • DOI
    10.1109/IMW.2015.7150272
  • Filename
    7150272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=719525