A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

Author

Saito, Hitoshi ; Sugimachi, Tatsuya ; Nakamura, Ko ; Ozawa, Soichiro ; Sashida, Naoya ; Mihara, Satoru ; Hikosaka, Yukinobu ; Wensheng Wang ; Hori, Tomoyuki ; Takai, Kazuaki ; Nakazawa, Mitsuharu ; Kosugi, Noboru ; Okuda, Masaki ; Hamada, Makoto ; Kawashi

Author_Institution

Syst. Memory Div., Fujitsu Semicond. Ltd., Aizuwakamatsu, Japan

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed triple-protection structured cell array, has constructed without an additional mask step, effectively protects 0.4-μm² ferroelectric capacitors from hydrogen and moisture degradation. We have designed our capacitor-over-bit-line (COB) structure to have a small cell size of 0.5 μm².

Keywords

ferroelectric capacitors; ferroelectric storage; random-access storage; capacitor-over-bit-line structure; ferroelectric RAM; ferroelectric capacitors; hydrogen; moisture degradation; triple-protection structured COB FRAM; triple-protection structured cell array; voltage 1.2 V; Arrays; Capacitors; Electrodes; Ferroelectric films; Nonvolatile memory; Random access memory; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150275

Filename

7150275