DocumentCode
719543
Title
Modeling of Atomic Migration Phenomena in Phase Change Memory Devices
Author
Crespi, Luca ; Lacaita, Andrea ; Boniardi, Mattia ; Varesi, Enrico ; Ghetti, Andrea ; Redaelli, Andrea ; D´Arrigo, Giuseppe
Author_Institution
Dipt. di Elettron., Politec. di Milano, Milan, Italy
fYear
2015
fDate
17-20 May 2015
Firstpage
1
Lastpage
4
Abstract
Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.
Keywords
integrated circuit modelling; phase change memories; atomic migration phenomena modeling; direct polarity; electrical driving forces; heavily cycled cells; mechanical driving forces; phase change memory devices; programming pulses; quantitative model; reverse polarity; thermal driving forces; wall architecture; Heating; Mathematical model; Phase change materials; Phase change memory; Programming; Solids; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2015 IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4673-6931-2
Type
conf
DOI
10.1109/IMW.2015.7150296
Filename
7150296
Link To Document