TCAD Simulation of Data Retention Characteristics of Charge Trap Device for 3-D NAND Flash Memory

Author

Dongyean Oh ; Bonghoon Lee ; Eunmee Kwon ; Sangyong Kim ; Gyuseog Cho ; Sungkye Park ; Seokkiu Lee ; Sungjoo Hong

Author_Institution

R&D Div, SK hynix Inc., Icheon, South Korea

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

We have developed a reliable and predictable TCAD modeling method for retention characteristics of the charge trap NAND Flash device. This modeling method can explain various retention phenomena related to temperature, program pattern, and bake time. The temperature dependency is well described by direct tunneling and thermionic emission, the pattern dependency can be explained by carrier diffusion and the short time retention can be described by the electron-hole dynamics in the storage nitride layer.

Keywords

NAND circuits; carrier lifetime; flash memories; technology CAD (electronics); thermionic emission; 3D NAND flash memory; TCAD simulation; carrier diffusion; charge trap device; data retention characteristics; direct tunneling; electron-hole dynamics; retention phenomena; storage nitride layer; temperature dependency; thermionic emission; Electron traps; Flash memories; Mathematical model; Solid modeling; Solids; Temperature; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150306

Filename

7150306