DocumentCode
720777
Title
Study of the ADR rinse effect on special residual type defect
Author
Bin Xing ; Jing´an Hao ; Guogui Deng ; Qiang Wu
Author_Institution
Technol. R&D, Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
In this paper, we study the formation mechanisms of two kinds of residual type defects and present an effective method, the "advanced defect reduction (ADR)" method, to remove them.
Keywords
crystal defects; semiconductor device reliability; semiconductor technology; ADR rinse effect; advanced defect reduction method; semiconductor technology; special residual type defect;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153368
Filename
7153368
Link To Document