Investigation of BEOL post etch wet cleaning for 40nm node and beyond

Author

Wei Sheng ; Kun Chen ; Fang Li ; Yefang Zhu ; Lili Jia ; Wenyan Liu ; Jinxun Fang ; Peng, Albert

Author_Institution

Shanghai Huali Microelectron. Corp., Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

2

Abstract

Wet cleaning is very critical for technology nodes below 40&28nm in ULSI manufacturing. Better clean efficiency and less film damage becomes the main challenge for WET clean processes in advanced technology development. New chemicals were used in this article to study BEOL post Etch WET cleaning for 40nm node and beyond. We compared the cleaning performance of chemcial A and chemical B through CD enlargement, kink profile, Cu loss, inline defect and WAT. Experimental results indicated that the copper loss and kink performance of chemical A were better than that of chemical B, even though inline defect, CD enlargement and WAT were comparable.

Keywords

ULSI; copper; etching; integrated circuit manufacture; BEOL post etch wet cleaning; CD enlargement; ULSI manufacturing; WAT; advanced technology development; back end of line; copper loss; critical dimension; film damage; inline defect; kink profile; size 40 nm; technology node; ultralarge scale integration; Artificial intelligence; Chemicals; Cleaning; Copper; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153374

Filename

7153374