• DocumentCode
    720810
  • Title

    Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si1−xGex

  • Author

    Gaire, Churamani ; Krishnan, Bharat ; Jinping Liu

  • Author_Institution
    Adv. Module Eng., GLOBALFOUNDRIES Inc., Malta, NY, USA
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we report the effect of two Si precursors, SiH4 and SiCl2H2 on the micro-loading, morphology and throughput for selective epitaxial growth of Si and Si1-xGex (0<;x<;1) on recessed or elevated source/drain junctions. We find that the pattern dependency (micro-loading), growth direction (morphology) and growth rate of selective epitaxial film of Si or Si1-xGex can be engineered by carefully adjusting the ratio of partial pressures of SiH4 and SiCl2H2.
  • Keywords
    Ge-Si alloys; elemental semiconductors; epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; Si; Si precursor effect; Si1-xGex; micro-loading; morphological property; selective epitaxial film growth rate; selective epitaxial growth throughput; source-drain junctions; Films; Morphology; Random access memory; Silicon; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153415
  • Filename
    7153415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720810