DocumentCode
720843
Title
Etch rate prediction in plasma etching using feed forward Error-Back Propagation neural network model
Author
Ha-Deok Song ; Ho-Taek Noh ; Dong-Il Kim ; Seung-Soo Han
Author_Institution
Dept. of Inf. & Commun. Eng., Myongji Univ., Yongin, South Korea
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
In this paper, a Virtual Metrology (VM) model is proposed to predict etch rate which is one of the most important etching profile in etch process. Error Back Propagation (EBP) neural network is used to make the VM for etch rate prediction. Etching process recipe data obtained through the Design of Experiments (DOE) are used to train the VM. The etch rate data are gained through the experiments, and the EBP neural VM model is trained to satisfy the allowable error between predicted etch rate and experimental etch rate. With this trained EBP neural network VM model, it can be possible to predict the etch rate without real experiments.
Keywords
backpropagation; design of experiments; feedforward neural nets; sputter etching; DOE; EBP neural VM model; design of experiment; etch rate prediction; etching profile; feed forward error-back propagation neural network model; plasma etching; virtual metrology model; Charge coupled devices; Etching; Feeds; Neural networks; Plasmas; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153456
Filename
7153456
Link To Document