DocumentCode
720860
Title
Pyramid size control and its effects on the performance of silicon heterojunction solar cells
Author
Xiaorang Tian ; Qi Wang ; Hongtao Hou ; Guangyu Chen ; Guanchao Zhao ; Rong Yang ; Liwei Li ; Yuan Meng ; Guo, Ted
Author_Institution
ENN Solar Energy Co. Ltd., Langfang, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
This paper explores the formation process of surface pyramid morphologies and etching characteristics during the texturing process of silicon heterojunction (SHJ) solar cells. Our research discovered that pyramid size followed a linear correlation with etch amount at the transition point of planes {100} to {111} as the etch rate reached the transition point. Several techniques were developed to control pyramid size by monitoring and adjusting the etching amount at the transition point. Using this approach, the average pyramid size was successfully controlled from 0.5 μm to 12 μm. We concluded that for pyramids smaller than 1 μm or greater than 12 μm, the light reflectance, minority carrier lifetime (MCLT), and performance of SHJ solar cells were adversely affected. In conclusion, a desirable range of pyramid sizes was empirically determined by our investigation.
Keywords
elemental semiconductors; etching; minority carriers; reflectivity; semiconductor heterojunctions; silicon; size control; solar cells; MCLT; SHJ solar cell texturing process; Si; etching characteristics; light reflectance; linear correlation; minority carrier lifetime; pyramid size control; silicon heterojunction solar cell texturing process; surface pyramid morphology; Etching; Morphology; Photovoltaic cells; Silicon; Surface morphology; Surface texture;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153488
Filename
7153488
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