A multi-level cell for STT-MRAM realized by capping layer adjustment

Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.