• DocumentCode
    721438
  • Title

    Electric-field control of magnetism in multiferroic heterostructures

  • Author

    Zhao, Y. ; Zhang, S. ; Li, P. ; Chen, A. ; Li, D. ; Rizwan, S. ; Zhang, J. ; Seidel, J. ; Qu, T. ; Luo, Z. ; He, Q. ; Yang, L. ; Wu, Y. ; Jin, X. ; Gao, C. ; Han, X. ; Ramesh, R.

  • Author_Institution
    Phys., Tsinghua Univ., Beijing, China
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    With the fast development of information storage, exploiting new concepts for dense, fast, and non-volatile random access memory with reduced energy consumption is a significant and challenging task. To realize this goal, electric-field control of magnetism is crucial. In this regard, multiferroic materials are important and have attracted much attention due to their interesting new physics and potentials for exploring novel multifunctional devices. In the multiferroic materials, electric polarization can be tuned by applying an external magnetic field or vice versa. This magnetoelectric (ME) effect originates from the coupling of the magnetic and ferroelectric orders. However, single-phase multiferroic materials are rare and the multiferroic heterostructures, composed of ferromagnetic (FM) and ferroelectric (FE) materials, provide an alternative way for exploring the ME coupling effect. One of the key issues in the study of the FM/FE heterostructures is the control of magnetism via electric fields, which is essential for the new generation information storage technology.
  • Keywords
    boron alloys; cobalt alloys; interface magnetism; iron alloys; lead compounds; magnetoelectric effects; multiferroics; Co40Fe40B20-Pb(Mg0.33Nb0.67)0.7Ti0.3O3; electric polarization; energy consumption; external magnetic field; ferroelectric order; ferromagnetic-ferroelectric heterostructures; information storage technology; magnetic order; magnetism electric-field control; magnetoelectric coupling effect; multiferroic heterostructures; multifunctional devices; nonvolatile random access memory; single-phase multiferroic materials; Electric fields; Magnetic domains; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7156525
  • Filename
    7156525