DocumentCode
721603
Title
Dynamic properties of MgO/CoFeB based sensors with perpendicular anisotropy
Author
Dabek, M. ; Wisniowski, P.
Author_Institution
Electron., AGH Univ. of Sci. & Technol., Krakow, Poland
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
The dynamic response to nanosecond current step of CoFeB/MgO/CoFeB based sensor with different sensitivity is studied in this contribution. The materials stacks are deposited by magnetron sputtering while the sensors are patterned using direct write laser lithography and ion beam milling. It is shown that the sensitivity of the TMR sensors does not affect rise and response time, which determine the sensor bandwidth, but controls the settling time.
Keywords
boron alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic sensors; magnetoresistive devices; milling; perpendicular magnetic anisotropy; photolithography; sputter deposition; tunnelling magnetoresistance; CoFeB-MgO-CoFeB; TMR sensors; direct write laser lithography; ion beam milling; magnetron sputtering; nanosecond current step; perpendicular anisotropy; sensor bandwidth; settling time; Anisotropic magnetoresistance; Magnetic fields; Magnetic sensors; Sensitivity; Time factors; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7156767
Filename
7156767
Link To Document