• DocumentCode
    721785
  • Title

    Electron theory of interstitial dopant dependence of magnetic properties in NdFe11TiX (X= B, C, N, O, F)

  • Author

    Harashima, Y. ; Terakura, K. ; Kino, H. ; Ishibashi, S. ; Miyake, T.

  • Author_Institution
    Nanosystem Res. Inst. “RICS”, AIST, Tsukuba, Japan
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Currently the strongest permanent magnet compound is Nd2Fe14B. At room temperature, its magnetization is 1.60 T and magnetocrystalline anisotropy field is 67 kOe [1]. There are many works to find a material which has better intrinsic magnetic properties than those of Nd2Fe14B. NdFe11TiN is a good candidate of the permanent magnet. It has comparably large magnetocrystalline anisotropy 80 kOe [2] or more than 70 kOe [3] at room temperature. However, its magnetization 1.48 T [3] is smaller than that of Nd2Fe14B. In NdFe11TiN, Ti works for stabilization of the system but it significantly reduces the magnetic moment [4]. Recently NdFe12N has been synthesized as a film and shown to have better magnetic properties [5]. Its magnetization and magnetocrystalline anisotropy at room temperature are 1.66 T and 80 kOe, respectively. For NdFe11TiN and NdFe12N, nitrogen atom at interstitial site has an important role for the enhancement of magnetization and magne-tocrystalline anisotropy. The interstitial doping can be an important method for development of permanent magnet materials.
  • Keywords
    iron compounds; magnetic anisotropy; magnetic moments; neodymium compounds; permanent magnets; titanium compounds; NdFe11TiB; NdFe11TiC; NdFe11TiF; NdFe11TiN; NdFe11TiO; interstitial dopant dependence; magnetic moment; magnetization; magnetocrystalline anisotropy; permanent magnet; Anisotropic magnetoresistance; Magnetic moments; Magnetic properties; Magnetization; Permanent magnets; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157023
  • Filename
    7157023