DocumentCode
722038
Title
Perpendicular magnetic anisotropy of full-Heusler Co2 FeAl0.5 Si0.5 films induced by MgAl2 O4 layer
Author
Li, L. ; Xu, X. ; Wu, Y. ; Wang, Z. ; Miao, J. ; Jiang, Y.
Author_Institution
Sch. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
fYear
2015
fDate
11-15 May 2015
Firstpage
1
Lastpage
1
Abstract
Ferromagnetic electrodes with perpendicular magnetic anisotropy (PMA) have been extensively studied because of the outstanding performance in applications. [1] To obtain high tunneling magnetoresistance (TMR), researchers have put efforts to realize PMA with Co-based full-Heusler alloy films with MgO barrier. However, the lattice mismatch between MgO and full-Heusler alloy leads to a rapid TMR reduction. Recently, spinel MgAl2O4 (MAO) is demonstrated to be an ideal candidate for coherent tunnel barrier materials due to the chemically stability, band structure and better lattice match with Heusler alloys. [2, 3] Therefore, it is necessary to study the PMA of Heusler alloys with MAO barrier.
Keywords
aluminium alloys; band structure; cobalt alloys; electrodes; iron alloys; magnesium compounds; magnetic thin films; perpendicular magnetic anisotropy; silicon alloys; tunnelling magnetoresistance; Co2FeAl0.5Si0.5; Heusler alloys; MgAl2O4; TMR reduction; band structure; chemically stability; coherent tunnel barrier materials; ferromagnetic electrodes; full Heusler films; lattice match; perpendicular magnetic anisotropy; tunneling magnetoresistance; Electrodes; Films; Lattices; Magnetic tunneling; Metals; Saturation magnetization; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location
Beijing
Print_ISBN
978-1-4799-7321-7
Type
conf
DOI
10.1109/INTMAG.2015.7157323
Filename
7157323
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