Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes

Author

Qin, Q. ; Akaslompolo, L. ; Yao, L. ; Majumdar, S. ; Vijayakumar, J. ; Chen, B. ; Van Dijken, S.

Author_Institution

Aalto Univ., Espoo, Finland

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This study demonstrates the switching behavior of nominally symmetric tunnel junctions that are comprised of two La_2/3Sr_1/3MnO₃ electrodes separated by a ferroelectric PbZr_0.2Ti_0.8O₃ or BaTiO₃ tunnel barrier, or a paraelectric SrTiO₃ tunnel barrier. Transmission electron microscopy measurements indicate that the structural and chemical symmetry of the junctions is broken at the tunnel barrier interfaces. Electrical transport measurements are preformed on Hall bar structures by scanning probe microscopy.

Keywords

Hall effect; barium compounds; electrical conductivity transitions; electrical resistivity; ferroelectric materials; interface structure; lanthanum compounds; lead compounds; scanning probe microscopy; strontium compounds; transmission electron microscopy; tunnelling; Hall bar structures; La_0.67Sr_0.33MnO₃-BaTiO₃; La_0.67Sr_0.33MnO₃-PbZr_0.2Ti_0.8O₃; La_0.67Sr_0.33MnO₃-SrTiO₃; chemical symmetry; electrical transport measurements; electrodes; ferroelectric tunnel barrier; giant resistive switching effects; paraelectric tunnel barrier; scanning probe microscopy; structural symmetry; symmetric all-oxide tunnel junctions; transmission electron microscopy; Electrical resistance measurement; Electrodes; Junctions; Resistance; Switches; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157352

Filename

7157352