Thickness dependence of localization to the anomalous hall effect in amorphous CoFeB thin films

Author

Zhu, T.

Author_Institution

State Key Lab. for Magn., Inst. of Phys., Beijing, China

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This study aims to investigate the quantum correction to anomalous Hall effect at low temperature in the CoFeB thin film with thickness varying from 3 to 26 nm. A robust weak localization effect of the electron conduction has been found. Results also show a dimensional crossover of electron conduction from 2D to 3D in the weak localization when the film is thicker than 8 .5 nm. The scaling relation between anomalous Hall conductance, σ_AH, and longitudinal conductance, σ_xx, for the amorphous alloys in the strongly disordered regime (σ_xx <; 104 S/cm) is discussed.

Keywords

Hall effect; amorphous state; boron alloys; cobalt alloys; electrical conductivity; iron alloys; metallic thin films; weak localisation; CoFeB; amorphous alloys; amorphous thin films; anomalous Hall conductance; anomalous Hall effect; electron conduction; longitudinal conductance; quantum correction; scaling relation; strongly disordered regime; thickness dependence; weak localization; Amorphous magnetic materials; Films; Hall effect; Temperature dependence; Temperature distribution; Temperature measurement; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157510

Filename

7157510