DocumentCode
722816
Title
Hybrid-type temperature sensor using n-type low-temperature processed poly-Si thin-film transistors
Author
Kitajima, Shuhei ; Kito, Katsuya ; Hayashi, Hisashi ; Matsuda, Tokiyoshi ; Kimura, Mutsumi
Author_Institution
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
fYear
2015
fDate
4-5 June 2015
Firstpage
84
Lastpage
85
Abstract
We have developed a hybrid-type temperature sensor using n-type low-temperature processed poly-Si thin-film transistors. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse.
Keywords
elemental semiconductors; leakage currents; silicon; temperature sensors; thin film transistors; Si; hybrid-type temperature sensor; n-type low-temperature process; off-leakage current; poly-Si thin-film transistors; Films; Temperature; Temperature dependence; Temperature measurement; Temperature sensors; Thin film transistors; hybrid-type temperature sensor; low-temperature processed poly-Si (LTPS); n-type; thin-film transistor (TFT);
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for
Conference_Location
Kyoto
Print_ISBN
978-1-4799-8614-9
Type
conf
DOI
10.1109/IMFEDK.2015.7158561
Filename
7158561
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