Evaluation of SnO2 / Al2O3 thin film deposited by RF magnetron sputtering

Author

Ogawa, Junji ; Yoshioka, Toshihiro ; Yuge, Masahiro ; Matsuda, Tokiyoshi ; Kimura, Mutsumi

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2015

fDate

4-5 June 2015

Firstpage

94

Lastpage

95

Abstract

Rare metal free SnO₂ / Al₂O₃ thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO₂ / Al₂O₃ powder target. The transmittance of the SnO₂ / Al₂O₃ film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO₂ / Al₂O₃ thin film would be applicable for the active layer of transparent TFT.

Keywords

aluminium compounds; rare earth metals; semiconductor thin films; sputtering; thin film transistors; tin compounds; Al₂O₃; RF magnetron sputtering; SnO₂; mixed powder target; rare metal free thin film semiconductor; thin film transistor active channel layer; transparent TFT; Aluminum oxide; Magnetic films; Radio frequency; Resistance; Sputtering; Thin film transistors; Oxide semiconductor; sheet resistance; transmittance; transparent TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2015 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-8614-9

Type

conf

DOI

10.1109/IMFEDK.2015.7158566

Filename

7158566