• DocumentCode
    723152
  • Title

    Degradation of Cu-Al wire bonded contacts under high current and high temperature conditions using in-situ resistance monitoring

  • Author

    Rongen, Rene ; van IJzerloo, Arjan ; Mavinkurve, Amar ; O´Halloran, G.M.

  • Author_Institution
    NXP Semicond., Nijmegen, Netherlands
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    1396
  • Lastpage
    1402
  • Abstract
    To evaluate the dynamics of Cu-Al bond contact degradation, the evolution of the intermetallic electrical interface resistance was monitored in-situ in a test device exposed to high temperatures (140 to 200°C) while conducting high current densities (7.0 × 103 to 4.5 × 104 A/cm2). The degradation is quite different from what is known for Au-Al contacts. The influence of different stimuli like current direction, current density, temperature, and temperature gradients is studied and discussed. On top of that the dynamics in relation to material properties is assessed in detail from which the concept of an incubation time until IMC degradation starts is proposed.
  • Keywords
    aluminium alloys; copper alloys; current density; electric resistance; electrical contacts; gold alloys; lead bonding; Au-Al; Cu-Al; IMC degradation; current density; current direction; high current condition; high temperature condition; in-situ resistance monitoring; intermetallic compound; intermetallic electrical interface resistance; material property; temperature 140 C to 200 C; temperature gradient; wire bonded contact degradation; Corrosion; Degradation; Resistance; Stress; Temperature measurement; Temperature sensors; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159780
  • Filename
    7159780