• DocumentCode
    725209
  • Title

    Design of wideband sub-harmonic receiver front-end using 0.18-µm BiCMOS technology

  • Author

    Ping-Yi Wang ; Te-Lin Wu ; Min-Chih Chou ; Ming-Yu Chen ; Yin-Cheng Chang ; Da-Chiang Chang ; Hsu, Shawn S. H.

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    March 30 2015-April 1 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A low-power sub-harmonic receiver front-end covering an RF frequency range of 18-21GHz with a converted IF range of 50-1550 MHz is demonstrated. The transformer-based inductive coupled resonators at the input of low-noise amplifier provide a wideband signal transformation and impedance matching effectively. Also, several circuit techniques such as GM boosted and 3D-inductors are employed for the LNA and mixer to achieve high circuit performance. The proposed receiver is fabricated using 0.18-μm SiGe BiCMOS technology with a total power consumption of 60 mW. Measured results show that the conversion gain is of 36 dB featuring an excellent gain flatness (±1dB) with the IF bandwidth up to 1.5 GHz, noise figure lower than 8.5 dB, and output P1dB compression point higher than 3 dBm for the IF frequency, respectively.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; receivers; IF range; LNA; RF frequency range; SiGe BiCMOS technology; impedance matching; low power wideband sub-harmonic receiver front-end; low-noise amplifier; transformer-based inductive coupled resonators; wideband signal transformation; Gain; Mixers; Noise measurement; Radio frequency; Receivers; Silicon germanium; Wideband; SiGe BiCMOS; receiver front-end; sub-harmonic mixer (SHM);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Symposium (IWS), 2015 IEEE International
  • Conference_Location
    Shenzhen
  • Type

    conf

  • DOI
    10.1109/IEEE-IWS.2015.7164610
  • Filename
    7164610