DocumentCode
725209
Title
Design of wideband sub-harmonic receiver front-end using 0.18-µm BiCMOS technology
Author
Ping-Yi Wang ; Te-Lin Wu ; Min-Chih Chou ; Ming-Yu Chen ; Yin-Cheng Chang ; Da-Chiang Chang ; Hsu, Shawn S. H.
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2015
fDate
March 30 2015-April 1 2015
Firstpage
1
Lastpage
4
Abstract
A low-power sub-harmonic receiver front-end covering an RF frequency range of 18-21GHz with a converted IF range of 50-1550 MHz is demonstrated. The transformer-based inductive coupled resonators at the input of low-noise amplifier provide a wideband signal transformation and impedance matching effectively. Also, several circuit techniques such as GM boosted and 3D-inductors are employed for the LNA and mixer to achieve high circuit performance. The proposed receiver is fabricated using 0.18-μm SiGe BiCMOS technology with a total power consumption of 60 mW. Measured results show that the conversion gain is of 36 dB featuring an excellent gain flatness (±1dB) with the IF bandwidth up to 1.5 GHz, noise figure lower than 8.5 dB, and output P1dB compression point higher than 3 dBm for the IF frequency, respectively.
Keywords
CMOS integrated circuits; low noise amplifiers; receivers; IF range; LNA; RF frequency range; SiGe BiCMOS technology; impedance matching; low power wideband sub-harmonic receiver front-end; low-noise amplifier; transformer-based inductive coupled resonators; wideband signal transformation; Gain; Mixers; Noise measurement; Radio frequency; Receivers; Silicon germanium; Wideband; SiGe BiCMOS; receiver front-end; sub-harmonic mixer (SHM);
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location
Shenzhen
Type
conf
DOI
10.1109/IEEE-IWS.2015.7164610
Filename
7164610
Link To Document