200-260GHz solid state amplifier with 700mW of output power

Author

Gritters, Darin ; Brown, Ken ; Ko, Elbert

Author_Institution

Teledyne Sci. & Imaging, Raytheon Missile Syst., Griffith, IN, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

Recent advances in high power millimeter wave (mmW) Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Power Amplifier (PA) technology combined with advances in high-frequency power combining have enabled the development of a 200-260GHz solid state power amplifier producing >700mW of output power. This paper outlines the development of a 50mW+ InP HBT PA Monolithic Millimeter wave Integrated Circuit (MMIC) and the technology associated with the subsequent power combining of 32 of these PA MMICs.

Keywords

MMIC power amplifiers; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; power combiners; InP; PA MMIC; frequency 200 GHz to 260 GHz; heterojunction bipolar transistor; high-frequency power combining; indium phosphide; mmW HBT PA technology; monolithic millimeter wave integrated circuit; power 700 mW; solid state power amplifier technology; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; MMICs; Millimeter wave technology; Oscillators; Radio frequency; Heterojunction Bipolar Transistor; Indium Phosphide; Millimeter Wave; Power Amplifier; Power Combining;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166808

Filename

7166808