• DocumentCode
    726037
  • Title

    A 206 ∼ 220 GHz CMOS VCO using body-bias technique for frequency tuning

  • Author

    Po-Han Chiang ; Jen-Hao Cheng ; Yi-Ching Wu ; Chau-Ching Chiong ; Wen-De Liu ; Guo-Wei Huang ; Tian-Wei Huang ; Huei Wang

  • Author_Institution
    Inst. of Astron. & Astrophys., Taipei, Taiwan
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 206 ~ 220 GHz varactor-free voltage-controlled oscillator (VCO) is proposed to improve the output power and tuning range. The topology of the VCO is push-push cross-coupled pair. By using body-bias technique, the parasitic capacitor of the cross-coupled pair can be adjusted, and the varactors in the conventional VCO design can be removed. The proposed VCO was designed and implemented in TSMC 65-nm CMOS technology with a chip size of 0.25 × 0.25 mm2. The tuning range is 6.6% (from 206.2 to 220 GHz). The measured phase noise is -66 dBc/Hz at 1 MHz offset frequency. The output power is 1.3 dBm at 216 GHz with 54-mW dc power consumption and its maximum dc-to-RF efficiency is 2.1%. To the best of our knowledge, this varactor-free VCO achieves the highest dc-to-RF efficiency among published CMOS VCOs around 200 GHz.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; millimetre wave oscillators; voltage-controlled oscillators; CMOS integrated circuit; body bias frequency tuning technique; frequency 206.2 GHz to 220 GHz; parasitic capacitor; push-push cross-coupled pair; size 65 nm; varactor-free VCO; voltage controlled oscillator; Biomedical imaging; CMOS integrated circuits; Oscillators; CMOS; Voltage-controlled oscillator (VCO); body-bias; dc-to-RF efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7166853
  • Filename
    7166853