• DocumentCode
    726251
  • Title

    Comparison of rigorous vs approximate methods for accurate calculation of 2D-materials band structures and applications to THz nanoelectronics

  • Author

    Pierantoni, L. ; Mencarelli, D. ; Sindona, A. ; Bellucci, S.

  • Author_Institution
    Univ. Politec. delle Marche, Ancona, Italy
  • fYear
    2015
  • fDate
    17-22 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report on ab initio and semi-empirical techniques to investigate the electromagnetic response of 2D materials with honeycomb lattice. Band structure simulations, using density functional theory, are performed on pristine graphene and silicene. The predictions on the unique electronic features of these systems are compared to those obtained with some commonly used approaches, based on the tight-binding approximation and k.p perturbation theory. The analysis is extended to computing the surface conductivity of graphene. Our results confirm the good agreement between fundamental and approximated methods up to THz frequencies. At the same time, they show how the ab initio methods have the capability of predicting electronic properties and plasmon propagation in more realistic nano-devices, where the semi-empirical methods require further scrutiny. The above formulation will be inserted in electromagnetic full-wave solvers, for the investigation and design of 2D THz nanodevices.
  • Keywords
    ab initio calculations; band structure; density functional theory; elemental semiconductors; graphene; graphene devices; k.p calculations; nanoelectronics; perturbation theory; plasmons; silicon; surface conductivity; terahertz wave devices; tight-binding calculations; 2D terahertz nanodevices; 2D-material band structure calculation; C; Si; ab initio technique; density functional theory; electromagnetic full-wave solvers; electromagnetic response; electronic properties; graphene surface conductivity; honeycomb lattice; k.p perturbation theory; plasmon propagation; semiempirical technique; silicene; terahertz nanoelectronics; tight-binding approximation; Conductivity; Discrete Fourier transforms; Lattices; Nanoscale devices; Silicon; Density Functional Theory; Graphene; Materials Beyond Graphene; Plasmon Based Devices; Plasmon Propagation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2015 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/MWSYM.2015.7167142
  • Filename
    7167142