A SPICE model of flexible transition metal dichalcogenide field-effect transistors

This paper presents the first SPICE model of the transition metal dichalcogenide (TMD) field-effect transistor (FET), which is a promising candidate for flexible electronics. The model supports different transistor design parameters such as width, length, oxide thickness, and various channel materials (MoS₂, WSe₂, etc.), as well as the applied strain, which enables the evaluation of transistor- and circuit-level behavior under process variation and different levels of bending. We performed SPICE simulations on digital logic gates to explore the design space of both MoS₂- and WSe₂-based transistors, and to evaluate the projected performance of these circuits under applied strain. Our simulations show that WSe₂ circuits outperform MoS₂ and Si-based CMOS in terms of energy-delay product (EDP) by up to 1 order of magnitude, depending on applications. Finally, we investigate TMDFET´s behavior under process variation.